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UT3418 - N-Channel Power MOSFET

General Description

The UTC UT3418 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization.

Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Key Features

  • S.
  • RDS(ON) ≤ 60 mΩ @ VGS=10V, ID=3.8A RDS(ON) ≤ 70 mΩ @ VGS=4.5V, ID=3.5A RDS(ON) ≤ 140 mΩ @ VGS=2.5V, ID=1.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 3.Drain 2 1 SOT-23 (EIAJ SC-59) 2 1 SOT-23-3 (JEDEC TO-236) 3 12 SOT-323 2.Gate 1.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT3418 3.8A, 30V N-CHANNEL ENHANCEMENT MODE 3 Power MOSFET 3  DESCRIPTION The UTC UT3418 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  FEATURES * RDS(ON) ≤ 60 mΩ @ VGS=10V, ID=3.8A RDS(ON) ≤ 70 mΩ @ VGS=4.5V, ID=3.5A RDS(ON) ≤ 140 mΩ @ VGS=2.5V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 3.Drain 2 1 SOT-23 (EIAJ SC-59) 2 1 SOT-23-3 (JEDEC TO-236) 3 12 SOT-323 2.Gate 1.