Unisonic Technologies UT35P06
UT35P06 is P-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with ideal for low voltage inverter applications. The UTC UT35P06 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.| Part No. | UT35P06 |
|---|---|
| Datasheet | UT35P06 Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 30 mΩ @ VGS=-10V, ID=-17.5A RDS(ON) ≤ 40 mΩ @ VGS=-4.5V, ID=-17.5A * High Cell Density Trench Technology * High Power and Current Handling Capability● SYMBOL SOP-8
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT35P06L-S08-R UT35P06G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing S S S G D D D D Tape Reel
● MARKING Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 7 QW-R212-008.A UT35P06 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current Continuous ID -35 A Pulsed Drain Current Pulsed (Note 2) IDM -70 A Single Pulsed Avalanche Energy (Note 3) EAS 45 mJ Power Dissipation PD 2.7 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
