UT3NN10
Description
The UTC UT3NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
- RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=3.0A RDS(ON) ≤ 0.17 Ω @ VGS=4.5V, ID=1.0A
- Fast Switching Speed
- Simple Drive Requirement
