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UT70N03 - N-Channel Power MOSFET

General Description

The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 7.2 mΩ @ VGS=10V, ID=33A.
  • RDS(ON) ≤ 9.5 mΩ @ VGS=4.5V, ID=20A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for UT70N03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UT70N03. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UT70N03 N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge ...

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anced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 7.2 mΩ @ VGS=10V, ID=33A * RDS(ON) ≤ 9.5 mΩ @ VGS=4.

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