Unisonic Technologies UT80P06
UT80P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UT80P06 is suitable for load switch, etc.| Part No. | UT80P06 |
|---|---|
| Datasheet | UT80P06 Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 14 mΩ @ VGS=-10V, ID=-40A RDS(ON) ≤ 18 mΩ @ VGS=-4.5V, ID=-40A * High Switching Speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT80P06L-TA3-T UT80P06G-TA3-T UT80P06L-TQ2-T UT80P06G-TQ2-T UT80P06L-TQ2-R UT80P06G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel
● MARKING Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 8 QW-R210-089.B UT80P06 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (TJ=175°C) TC=25°C TC=125°C ID -80 A -48 A Pulsed IDM -160 A Single Pulse Avalanche Energy (Note 2) L=0.1mH EAS 92.4 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.4 V/ns Power Dissipation (TC=25°C) PD 160 W Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
