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UTD405 - P-CHANNEL MOSFET

General Description

The UTD405 can provide excellent RDS(ON), low gate charge and low gate resistance by using advanced trench technology.

This device is well suited for high current load applications with the excellent thermal resistance.

Key Features

  • S.
  • RDS(ON) ≤ 26 mΩ @ VGS=-10V, ID=-18A.
  • RDS(ON) ≤ 45 mΩ @ VGS=-4.5V, ID=-10A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UTD405 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTD405 can provide excellent RDS(ON), low gate charge and low gate resistance by using advanced trench technology. This device is well suited for high current load applications with the excellent thermal resistance.  FEATURES * RDS(ON) ≤ 26 mΩ @ VGS=-10V, ID=-18A * RDS(ON) ≤ 45 mΩ @ VGS=-4.5V, ID=-10A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.