Datasheet4U Logo Datasheet4U.com

UTG25N120 - 1200V NPT IGBT

General Description

The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc.

Key Features

  • High switching speed.
  • High avalanche ruggedness.
  • Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C.
  • Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C.
  • SYMBOL.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UTG24P05 100/1000 BASE-T SINGLE PORT MAGNETICS MODULE UTG
UTG48T01 100/1000 BASE-T DUAL PORT MAGNETICS MODULE UTG

Other Datasheets by Unisonic Technologies

Part Number Description
UTG25N120-G2 1200V TRENCH GATE FIELD-STOP IGBT
UTG25N65-S 650V TRENCH GATE FIELD-STOP IGBT
UTG20N65-S 650V TRENCH GATE FIELD-STOP IGBT
UTG28N65-S 650V TRENCH GATE FIELD-STOP IGBT
UTG10N65-S 650V TRENCH GATE FIELD-STOP IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UTG25N120 is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.