Datasheet4U Logo Datasheet4U.com

UTR2104 - HALF-BRIDGE DRIVER

General Description

The UTR2104 is a high voltage, high speed power MOS FET and IGBT drive r with dependent high- and low-side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Key Features

  • S.
  • Floating channel designed for bootstrap operation.
  • Fully operational to 600V.
  • Tolerant to negative transient voltage, dV/dt immune.
  • Gate drive supply range from 10V to 20V.
  • Undervoltage lockout.
  • 3.3V, 5V, and 15V input logic compatible.
  • Cross-conduction prevention logic.
  • Internally set deadtime.
  • High-side output in phase with input.
  • Shutdown input turns off both channels.
  • Matched propagation delay for both channels.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UTR21 FAST RECOVERY RECTIFIERS Digitron Semiconductors
UTR21 0.5 Amp To 2 Amp Fast Recovery Glass Rectifiers Microsemi
UTR20 FAST RECOVERY RECTIFIERS Digitron Semiconductors
UTR20 0.5 Amp To 2 Amp Fast Recovery Glass Rectifiers Microsemi
UTR22 FAST RECOVERY RECTIFIERS Digitron Semiconductors

Other Datasheets by Unisonic Technologies

Part Number Description
UTR2103 HALF-BRIDGE DRIVER
UTR2113 HIGH AND LOW SIDE DRIVER
UTR2117 HIGH SIDE DRIVER
UTR2304 HALF-BRIDGE DRIVER
UTR4502 P-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UTR2104 Advance LINEAR INTEGRATED CIRCUIT HALF-BRIDGE DRIVER  DESCRIPTION The UTR2104 is a high voltage, high speed power MOS FET and IGBT drive r with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10V to 600V.