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UTR2117 - HIGH SIDE DRIVER

General Description

The UTR2117 are high voltage, high speed power MOSFET and IGBT driver.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono-lithic construction.

The logic input is compatible with standard CMOS outputs.

Key Features

  • S.
  • Floating channel designed for bootstrap operation.
  • Fully operational to 600V.
  • Tolerant to negative transient voltage, dV/dt immune.
  • Gate drive supply range from 10 V to 20V.
  • Undervoltage lockout.
  • CMOS Schmitt-triggered inputs with pull-down.
  • Output in phase with input.

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Other Datasheets by Unisonic Technologies

Part Number Description
UTR2113 HIGH AND LOW SIDE DRIVER
UTR2103 HALF-BRIDGE DRIVER
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTR2117 Advance LINEAR INTEGRATED CIRCUIT HIGH SIDE DRIVER  DESCRIPTION The UTR2117 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono-lithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600V.