UTT50N06M
Description
The UTC UTT50N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
Key Features
- RDS(ON) ≤ 12 mΩ @ VGS=10V, ID=25A RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=20A
- High Cell Density Trench Technology
- High Power and Current Handling Capability
