Datasheet4U Logo Datasheet4U.com

UTT50P10-H - P-CHANNEL POWER MOSFET

General Description

The UTC UTT50P10-H is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

It can also withstand high energy in the avalanche.

Key Features

  • RDS(ON) ≤ 43 mΩ @ VGS=-10V, ID=-15A RDS(ON) ≤ 48 mΩ @ VGS=-4.5V, ID=-10A.
  • High Switching Speed.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Improved dv/dt capability Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UTT50P10 P-CHANNEL POWER MOSFET Unisonic Technologies
UTT50P04 P-CHANNEL POWER MOSFET Unisonic Technologies
UTT50P06 P-CHANNEL POWER MOSFET Unisonic Technologies
UTT50N05 N-CHANNEL POWER MOSFET Unisonic Technologies
UTT50N06L-TA3 N-Channel MOSFET INCHANGE

Other Datasheets by Unisonic Technologies

Part Number Description
UTT50N03L N-CHANNEL POWER MOSFET
UTT50N06 N-CHANNEL MOSFET
UTT50N06H N-CHANNEL FAST SWITCHING MOSFET
UTT50N06M N-CHANNEL MOSFET
UTT08N02Z-F 20V N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UTT50P10-H -50A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT50P10-H is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche.  FEATURES * RDS(ON) ≤ 43 mΩ @ VGS=-10V, ID=-15A RDS(ON) ≤ 48 mΩ @ VGS=-4.