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X1049A Datasheet Preview

X1049A Datasheet

HIGH GAIN TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
X1049A
NPN SILICON TRANSISTOR
HIGH GAIN TRANSISTOR
FEATURES
* VCEV = 80V
* High Gain
* 20 Amps pulse current
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
X1049AL-TF3-T
X1049AG-TF3-T
X1049AL-TF2-T
X1049AG-TF2-T
X1049AL-T92-B
X1049AG-T92-B
X1049AL-T92-K
X1049AG-T92-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-220F
TO-220F2
TO-92
TO-92
Pin Assignment
123
BCE
BCE
EBC
EBC
Packing
Tube
Tube
Tape Box
Bulk
X1049AG-TF3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube, B: Tape Box, K: Bulk
(2) TF3: TO-220F, TF2: TO-220F2, T92: TO-92
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
TO-220F / TO-220F2
TO-92
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-061.F




UTC

X1049A Datasheet Preview

X1049A Datasheet

HIGH GAIN TRANSISTOR

No Preview Available !

X1049A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
25
5
V
V
Collector Current
DC
Pulse
IC
4A
20 A
Base Current
TO-220F
IB
500 mA
2
Power Dissipation (TA=25°C)
TO-220F2
PD
2.1 W
TO-92
1
Junction Temperature
Operating Temperature
TJ
TOPR
125
-20 ~ +85
°C
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO IC=100μA
Collector-Emitter Breakdown Voltage
VCEO IC=10mA
Collector-Emitter Breakdown Voltage
VCES IC=100μA
Collector-Emitter Breakdown Voltage
VCEV IC=100μA, VEB=1V
Emitter-Base Breakdown Voltage
VEBO IE=100μA
Collector Cut-Off Current
ICBO VCB=50V
Emitter Cut-Off Current
IEBO VEB=4V
Collector Emitter Cut-Off Current
ICES
VCES=50V
IC=0.5A, IB=10mA
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=1A, IB=10mA
IC=2A, IB=10mA
IC=4A, IB=50mA
Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=4A, IB=50mA
Base-Emitter Turn-On Voltage (Note)
VBE(ON) IC=4A, VCE=2V
IC=10mA, VCE=2V
DC Current Gain (Note)
IC=0.5A, VCE=2V
hFE IC=1A, VCE=2V
IC=4A, VCE=2V
IC=20A, VCE=2V
Transition Frequency
fT IC=50mA, VCE=10V, f=50MHz
Output Capacitance
COBO VCB=10V, f=1MHz
Turn-On Time
tON IC=4A, IB=40mA, VCC=10V
Turn-Off Time
tOFF IC=4A, IB=±40mA, VCC=10V
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%
MIN TYP MAX UNIT
80 120
V
25 35
V
80 120
V
80 120
V
5 8.75
V
0.3 10 nA
0.3 10 nA
0.3 10 nA
30 70
60
125
130
280
mV
155 400
890 980 mV
820 920 mV
250 430
300 450
300 450 1200
200 350
7
180 MHz
45 60 pF
125 ns
380 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-061.F


Part Number X1049A
Description HIGH GAIN TRANSISTOR
Maker UTC
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