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TET45L40B Datasheet Preview

TET45L40B Datasheet

Integrated Gate Turn-off (IGTO) Thyristor

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TET45L40B
Wuxi Unigroup Microelectronics Company
Integrated Gate Turn-off (IGTO) Thyristor
FEATURES
High snubberless turn-off (4000A) capability
Suitable for high frequency (>1kHz) operation
Low gate drive power consumption
Built-in over-current protection
Optical trigger input and status feedback
Suitable for series and parallel operation
Product Summary
VDRM
ITGQM
ITSM
VT0
VDclink
4500V
4000A
25kA
1.2V
2800V
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Rep. Peak Off-state Voltage
Long Term DC Voltage
VDRM
VDclink
Gate Unit Energized
Ambient Cosmic Radiation at Sea Level in Open Air.
Gate Unit Energized
Rep. Peak Off-state Current
IDRM VD = VDRM, Gate Unit Energized
Value
4500
2800
50
Unit
V
V
mA
Thermal Resistance
Parameter
Symbol
Junction Operating Temperature
Storage Temperature Range
Ambient Temperature
Thermal Resistance Junction to Case
Thermal Resistance Case to Heatsink
(Double side cooling)
(Double side cooling)
TVJ
Tstg
TA
Rth(J-C)
Rth(C-H)
Min.
-25
-25
-25
--
--
Value
Typ.
--
--
--
--
--
Max.
125
60
50
12.7
3
Unit
ºC
ºC
ºC
K/kW
K/kW
V3.0
1 www.tsinghuaicwx.com




Unigroup

TET45L40B Datasheet Preview

TET45L40B Datasheet

Integrated Gate Turn-off (IGTO) Thyristor

No Preview Available !

TET45L40B
Wuxi Unigroup Microelectronics Company
Specifications TA = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Max. Peak Non-repetitive Surge Current
On-state Voltage
Max. Average On-state Current
Threshold Voltage
Turn-on Process
Max. Rate of Rise of On-state Current
Turn-on Delay Time
Rise Time
Min. On-time
Turn-off Process
Max. Controllable Turn-off Current
Turn-off Delay Time
Fall Time
Min. Off-time
ITSM
VT
IT(AV)M
VT0
TJ = 125ºC
TP = 10ms
TP = 1ms
TJ = 125ºC, ITGQ = 2000A
Half Sine Wave, TC = 85ºC,
Double Side Cooling
TJ = 125ºC, IT = 1000...4000A
di/dt
Tdon
Tr
Ton(min.)
VDM < VDRM, TJ = 125ºC
VD = 2250V
VDM < VDRM, TJ = 125ºC
VD = 2250V, ITGQ = 4000A
ITGQM
Tdoff
Tf
Toff(min.)
VDM < VDRM, TJ = 125ºC
VD = 2250V
VDM < VDRM, TJ = 125ºC
VD = 2250V, ITGQ = 4000A
Min.
Value
Typ.
Max.
Unit
-- -- 25
KA
-- -- 40
-- 2.7 2.9 V
-- -- 1700 A
-- -- 1.2 V
-- 1000 -- A/μs
-- --
-- --
40 --
4 μs
1 μs
-- μs
-- -- 4000 A
-- -- 4 μs
-- -- 0.8 μs
40 --
-- μs
Power Supply of Gate Unit
Parameter
Symbol
Test Conditions
Min.
Value
Typ.
Max.
Unit
Power Supply Voltage
AC Square Wave Amplitude
VG (15kHz-100kHz) or DC Voltage. 28 35 40 V
NO Galvanic Isolation to Power Circuit
Gate Unit Power Consumption
PG
f = 1kHz, δ = 0.5
-- -- 30 W
V3.0
2 www.tsinghuaicwx.com


Part Number TET45L40B
Description Integrated Gate Turn-off (IGTO) Thyristor
Maker Unigroup
Total Page 8 Pages
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