The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TMB120N10A Wuxi Unigroup Microelectronics Company
100V N-Channel Trench MOSFET
FEATURES
High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation
APPLICATIONS
Power Switching Application Hard Switched and High Frequency Circuits Uninterruptible Power Supply
Device Marking and Package Information
Device
Package
TMB120N10A
TO-263
Marking 120N10A
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
(note1)
(note2) (n
TMB120N10A Datasheet
