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Unigroup

TPA65R360M Datasheet Preview

TPA65R360M Datasheet

650V Super-Junction Power MOSFET

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TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360M
  Wuxi Unigroup Microelectronics Company
650V Super-Junction Power MOSFET
FEATURES
l   Very low FOM RDS(on)×Qg
l   100% avalanche tested
l    RoHS compliant
APPLICATIONS
l   Switch Mode Power Supply (SMPS)
l   Uninterruptible Power Supply (UPS)
l   Power Factor Correction (PFC)
Device Marking and Package Information
Device
TPA65R360M TPD65R360M TPP65R360M
Package
TO-220F
TO-252
TO-220
Marking
65R360M
65R360M
65R360M
TPU65R360M
TO-251
65R360M
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
TO-252
Value
TO-220 TO-251
TO-220F
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current 
TC = 25ºC
TC = 100ºC
Pulsed Drain Current                                                (note1)
Gate-Source Voltage
Single Pulse Avalanche Energy                                (note2)
Avalanche Current                                                    (note1)
Repetitive Avalanche Energy                                   (note1)
MOSFET dv/dt ruggedness, VDS = 0...480V
Reverse diode dv/dt, VDS = 0…480V, ISD ≤ ID
Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature Range 
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
dv/dt
PD
TJ, Tstg
650
11
6.6
33
±30
215
1.8
0.32
50
15
83
-55~+150
31
Unit
V
A
A
V
mJ
A
mJ
V/ns
V/ns
W
ºC
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RthJC
RthJA
Value
TO-252 TO-220 TO-251
1.5
62
TO-220F
4
80
Unit
ºC/W
V2.0
1               www.tsinghuaicwx.com




Unigroup

TPA65R360M Datasheet Preview

TPA65R360M Datasheet

650V Super-Junction Power MOSFET

No Preview Available !

TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360M
  Wuxi Unigroup Microelectronics Company
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance   (Note3)
Gate resistance
Dynamic
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
RG
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V, TJ = 25ºC
   VDS = 650V, VGS = 0V, TJ = 150ºC
VGS = ±30V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.5A
f = 1.0MHz open drain
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Drain-Source Body Diode Characteristics
VGS = 0V,
VDS = 100V,
f = 1.0MHz
VDD = 520V, ID = 11A,
VGS = 10V
VDD = 400V, ID = 11A,
RG = 25Ω
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
IS
TC = 25ºC
ISM
VSD TJ = 25ºC, ISD = 11A, VGS = 0V
trr
Qrr
VR = 400V, IF = IS,
diF/dt = 100A/μs
Irrm
Min.
Value
Typ.
Max.
650 --
--
-- --   1
-- -- 100
-- -- ±100
2.5 -- 4.0
-- 0.31 0.36
-- 18 --
-- 871 --
-- 37 --
-- 5 --
-- 22 --
-- 4 --
-- 8 --
-- 69.7 --
-- 69.5 --
-- 145 --
-- 59 --
-- -- 11
-- -- 33
-- 0.9 1.2
-- 377 --
-- 3.4 --
-- 17.8 --
Unit
V
μA
nA
V
Ω
pF
nC
ns
A
V
ns
μC
A
Notes
1. Repetitive Rating: Pulse Width limited by maximum junction temperature
2. IAS = 1.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
V2.0
2               www.tsinghuaicwx.com


Part Number TPA65R360M
Description 650V Super-Junction Power MOSFET
Maker Unigroup
Total Page 10 Pages
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