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Unigroup

TSP15N10A Datasheet Preview

TSP15N10A Datasheet

100V N-Channel DTMOS

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TSP15N10A
Wuxi Unigroup Microelectronics Company
100V N-Channel DTMOS
FEATURES
Trench Power DTMOS technology
Low RDS(ON)
Low Gate Charge
Optimized for fast-switching applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
Package
Marking
TSP15N10A
TO-220
15N10A
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current (Package Limited)
Pulsed Drain Current
(note1)
Gate-Source Voltage
Single Pulse Avalanche Energy
(note2)
Avalanche Current
(note1)
Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature Range
VDSS
ID
IDM
VGSS
EAS
IAS
PD
TJ, Tstg
100
150
600
±20
609
28
208
-55~+150
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RthJC
RthJA
Value
0.6
60
Unit
V
A
A
V
mJ
A
W
ºC
Unit
ºC/W
V3.1
1 www.tsinghuaicwx.com




Unigroup

TSP15N10A Datasheet Preview

TSP15N10A Datasheet

100V N-Channel DTMOS

No Preview Available !

TSP15N10A
Wuxi Unigroup Microelectronics Company
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Forward Transconductance (Note3)
Dynamic
IGSS
VGS(th)
RDS(on)
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V, TJ = 25ºC
VDS = 100V, VGS = 0V, TJ = 150ºC
VGS = ±20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
VDS = 10V, ID = 50A
VGS = 0V,
VDS = 50V,
f = 1.0MHz
VDD = 50V, ID = 50A,
VGS = 10V
VDD = 50V, ID = 50A,
RG = 25
TC = 25ºC
TJ = 25ºC, ISD = 50A, VGS = 0V
IF = 50A,
diF/dt = 500A/μs
Min.
Value
Typ.
Max.
100 --
--
-- -- 1
-- -- 100
-- -- ±100
2 -- 4
-- 3.5 4.2
-- 140 --
-- 7700 --
-- 470 --
-- 28 --
-- 138 --
-- 37 --
-- 35.5 --
-- 35 --
-- 22 --
-- 105 --
-- 45 --
-- -- 50
-- -- 150
-- 0.9 1.2
-- 50 --
-- 110 --
Unit
V
μA
nA
V
mΩ
S
pF
nC
ns
A
V
ns
nC
Notes
1. Repetitive Rating: Pulse Width limited by maximum junction temperature
2. IAS = 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
V3.1
2
www.tsinghuaicwx.com


Part Number TSP15N10A
Description 100V N-Channel DTMOS
Maker Unigroup
Total Page 7 Pages
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