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TTE01P10AT Wuxi Unigroup Microelectronics Company
100V P-Channel Trench MOSFET
FEATURES
Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications
APPLICATIONS
Load Switches Battery Switch
TO-251-SL
Device Marking and Package Information
Device
Package
TTE01P10AT
TO-251-SL
Marking 01P10AT
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
(note1)
(note2) (note1)
VDSS ID IDM
VGSS EAS IAR PD TJ, Tstg
Value -100 -1.5
-6 ±20 0.8
-2 1.
TTE01P10AT Datasheet
