11N90 Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

11N90 Features

* RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.5A

* High switching speed

* Improved dv/dt capability

* 100% avalanche tested

* SYMBOL Power MOSFET

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N90L-TA3-T 11N90G-TA3-T TO-220 11N90L-TF1-T 11N90G-TF1-T

11N90 General Description

The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in th.

11N90 Datasheet (222.37 KB)

11N90 Datasheet Preview — Preview of 11N90 PDF

Datasheet Details

Part number:

11N90

Manufacturer:

Unisonic Technologies

File Size:

222.37 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

11N90 N-Channel Mosfet Transistor (Inchange Semiconductor)

11N90C 900V N-Channel MOSFET (Fairchild Semiconductor)

11N06LT PHB11N06LT (NXP Semiconductors)

11N120CN HGTG11N120CN (Fairchild Semiconductor)

11N3L N-channel Power MOSFET (STMicroelectronics)

11N40C FQP11N40C (Fairchild Semiconductor)

11N4LLF5 N-channel Power MOSFET (STMicroelectronics)

11N50 N-CHANNEL POWER MOSFET (Unisonic Technologies)

11N50-CB N-CHANNEL MOSFET (UTC)

11N50E PowerMOS transistors (Philips)

TAGS

11N90 N-CHANNEL POWER MOSFET Unisonic Technologies

Image Gallery

11N90 Features

11N90 General Description

Datasheet Details

File Size:

Description:

11N90 Distributor