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Unisonic Technologies

11NM40 Datasheet Preview

11NM40 Datasheet

N-CHANNEL SUPER-JUNCTION MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
11NM40
Preliminary
11A, 400V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 11NM40 is an Super Junction MOSFET Structure . It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 11NM40 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 0.38@ VGS=10V, ID=5.7A
* High switching speed
* Low effective output capacitance (Typ.=95pF)
* Low gate charge (Typ.=40nC)
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM40L-TF3-T
11NM40G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A38.b




Unisonic Technologies

11NM40 Datasheet Preview

11NM40 Datasheet

N-CHANNEL SUPER-JUNCTION MOSFET

No Preview Available !

11NM40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage
Drain Current
Continuous
TC=25°C
TC=100°C
Pulsed (Note 1)
VGSS
ID
IDM
±30
11.6
7
33
V
A
A
A
Avalanche Current (Note 1)
Single Pulsed Avalanche Energy (Note 2)
IAR
EAS
11 A
154 mJ
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
EAR
dv/dt
12.5 mJ
4.5 V/ns
Total Power Dissipation
TC=25°C
Derate above 25°C
PD
125 W
1.0 W/°C
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
-55~+150
-55~+150
°C
°C
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 5 Seconds
TL
300 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 2.3mH, IAS = 11.6A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 11.6A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
1.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-A38.b


Part Number 11NM40
Description N-CHANNEL SUPER-JUNCTION MOSFET
Maker Unisonic Technologies
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