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12N10 - N-CHANNEL POWER MOSFET

General Description

The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps.

Key Features

  • RDS(on) < 0.18Ω @ VGS=10V, ID=6A.
  • High switching speed.
  • Low gate charge.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 12N10 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps.  FEATURES * RDS(on) < 0.18Ω @ VGS=10V, ID=6A * High switching speed * Low gate charge  SYMBOL 2.Drain Power MOSFET 1.Gate 3.