Datasheet4U Logo Datasheet4U.com

13002AG - NPN SILICON TRANSISTOR

Description

The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

The UTC 13002AG is designed for use in Compact Fluorescent Lamps.

Features

  • S.
  • High Voltage Capability.
  • Low Spread of Dynamic Parameters.
  • Very High Switching Speed 1 TO-92.

📥 Download Datasheet

📁 Similar Datasheet

  • 1300 - Crystal Clock Oscillators (Nihon Dempa Kogyo)
  • 1300-102-4xx - 2.54mm IDC Connector (Methode Electronics)
  • 13001 - NPN Epitaxial Silicon Transistor (Elite)
  • 13001-2 - NPN power transistor (Jingdao)
  • 13001-A - NPN power transistor (Jingdao)
  • 13001S - Low-frequency amplification environment rated bipolar transistors (ETC)
  • 13001S8D - NPN Transistor (JTD)
  • 13003 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
  • 13003 - NPN Epitaxial Silicon Transistor (Elite Enterprises)
  • 13003 - HIGH VOLTAGE AND HIGH SPEED SWITCH (HSiN)
Other Datasheets by Unisonic Technologies

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 13002AG Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS „ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The UTC 13002AG is designed for use in Compact Fluorescent Lamps.
Published: |