* RDS(ON) = 0.1Ω @VGS = 10 V * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( CRSS = typical 32pF ) * Fast switching capability * Avalanche .

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
* FEATURES * RDS(ON) =.

Power MOSFET The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistan.

19N10V

19N20

19N20C

19N3LLH6

19N60M6

19N65M5

19NF20

19NM50N

19NM60

19NM60N

19-226-R6G7C-B02-2T

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