19N10 Key Features
- RDS(ON) = 0.1Ω @VGS = 10 V
- Ultra low gate charge ( typical 19nC )
- Low reverse transfer Capacitance ( CRSS = typical 32pF )
- Fast switching capability
- Avalanche energy Specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION