Datasheet4U Logo Datasheet4U.com

1N50-KW - N-CHANNEL POWER MOSFET

Description

The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 10Ω @ VGS=10V, ID=0.5A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

Datasheet preview – 1N50-KW

Datasheet Details

Part number 1N50-KW
Manufacturer Unisonic Technologies
File Size 227.83 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 1N50-KW Datasheet
Additional preview pages of the 1N50-KW datasheet.

📁 Similar Datasheet

  • 1N50-CB - N-CHANNEL POWER MOSFET (UTC)
  • 1N5000 - Silicon Rectifiers (Microsemi Corporation)
  • 1N5001 - Silicon Rectifiers (Microsemi Corporation)
  • 1N5002 - Silicon Rectifiers (Microsemi Corporation)
  • 1N5003 - Silicon Rectifiers (Microsemi Corporation)
  • 1N5008A - (1N5008A - 1N5042A) DIODE (New Jersey Semi-Conductor)
  • 1N5009A - (1N5008A - 1N5042A) DIODE (New Jersey Semi-Conductor)
  • 1N501 - GOLD BONDED DIODES (BKC)
  • 1N5010A - (1N5008A - 1N5042A) DIODE (New Jersey Semi-Conductor)
  • 1N5011A - (1N5008A - 1N5042A) DIODE (New Jersey Semi-Conductor)
Other Datasheets by Unisonic Technologies
  • 1N50 - N-CHANNEL POWER MOSFET
  • 1N50A - N-CHANNEL POWER MOSFET
  • 1N50K-TA - N-CHANNEL POWER MOSFET
  • 1N50Z - N-CHANNEL POWER MOSFET
  • 1N5401G - GLASS PASSIVATED SILICON RECTIFIER
  • 1N5406G - GLASS PASSIVATED SILICON RECTIFIER
  • 1N5408G - GLASS PASSIVATED SILICON RECTIFIER

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 10Ω @ VGS=10V, ID=0.
Published: |