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Unisonic Technologies

1N50A Datasheet Preview

1N50A Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
1N50A
Preliminary
1.0A, 500V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 1N50A is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 1N50A is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 8.0@ VGS=10V, ID=0.5A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N50AL-TM3-T
1N50AG-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
Pin Assignment
123
GDS
1N50AL-TM3-T
(1)Packing Type
(1) T: Tubel
(2)Package Type
(2) TM3: TO-251
Packing
Tube
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-030.a




Unisonic Technologies

1N50A Datasheet Preview

1N50A Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

1N50A
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 500 V
VGSS ±30 V
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
ID
IDM
1 (Note 2)
4 (Note 2)
A
A
Avalanche Energy
Power Dissipation
Derate above 25°C
Single Pulsed (Note 4)
EAS
PD
40 mJ
25 W
0.2 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 80mH, IAS = 1A, VDD = 50V, RG = 27, Starting TJ = 25°C
5. ISD 1.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
110
5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=0.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=0.5A, RG=25
(Note 1, 2)
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=1A, VGS=0V
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
500 V
1 µA
+100 nA
-100 nA
3.0 5.0 V
6.8 8.0
125 290
17 35
15 20
pF
pF
pF
32 40 ns
17 35 ns
54 70 ns
18 32 ns
9 15 nC
3 nC
0.8 nC
1A
4A
1.15 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-030.a


Part Number 1N50A
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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1N50A Datasheet PDF






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