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1N60A Key Features

  • RDS(ON) <15Ω@VGS = 10V
  • Ultra Low gate charge (typical 8.0nC)
  • Low reverse transfer capacitance (CRSS = 3.0 pF(max))
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING INFORMATION

Other 1N60A Datasheets

Manufacturer Part Number Description
BKC Logo BKC 1N60A Gold Bonded Diode
NTE Logo NTE Electronics 1N60A Germanium Diode
CITC Logo Chip Integration Technology 1N60 Small Signal Diodes
Sunmate Logo Sunmate 1N60 SMALL SIGNAL SCHOTTKY DIODES
MCC Logo Micro Commercial Components 1N60 Schottky Barrier Rectifier

View all 1N60A datasheets →

1N60A Description

The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.