1N70 Key Features
- RDS(ON) < 13.5Ω @ VGS = 10V, ID = 0.6A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 1N70
- Manufacturer: Unisonic Technologies (official site)
- Size: 315.72 KB
Other 1N70 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
BKC |
1N70 | Gold Bonded Diode |
Unisonic Technologies |
1N70-CB | N-CHANNEL MOSFET |
|
Unisonic Technologies |
1N70-LC1 | 700V N-CHANNEL POWER MOSFET |
Hitachi Semiconductor |
1N702 | (1N702 - 1N707) 400mW Zener Diodes |
|
Hitachi Semiconductor |
1N703 | (1N702 - 1N707) 400mW Zener Diodes |
1N70 Description
The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.