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1N70 - N-CHANNEL POWER MOSFET

General Description

The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 13.5Ω @ VGS = 10V, ID = 0.6A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 1N70 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 1N70. For precise diagrams, tables, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 1N70 1.2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, ...

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a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 13.5Ω @ VGS = 10V, ID = 0.