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Unisonic Technologies

25N20 Datasheet Preview

25N20 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
25N20
25A, 200V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC 25N20 is an N-channel enhancement mode power
MOSFET and it uses UTC’s perfect technology to provide designers
with fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
It is generally suitable for all commercial-industrial applications
and DC/DC converters requiring low voltage.
FEATURES
* RDS(ON) < 160 m@ VGS =10V, ID =16A
* Single Drive Requirement
* Low Gate Charge
* RoHS Compliant
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
25N20L-TF3-T
25N20G-TF3-T
25N20L-TF1-T
25N20G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-A84.D




Unisonic Technologies

25N20 Datasheet Preview

25N20 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

25N20
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
200
V
Gate Source Voltage
Continuous Drain Current TC =25°C
(VGS=10V)
TC = 100°C
Pulsed Drain Current (Note 2)
VGSS
ID
ID
IDM
±20
25
15.86
80
V
A
A
A
Total Power Dissipation
(TC =25°C)
Operating Junction Temperature
PD 50 W
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
2.5
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS VGS =0V, ID =250µA
BVDSS/TJ Reference to 25°C , ID =1mA
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
VDS =100V, VGS =0V, TJ=25°C
VDS =80V, VGS =0V,TJ =150°C
IGSS VGS =±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS =VGS, ID =250µA
VGS =10V, ID =16A
VDS =10V, ID =16A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time1
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge (Note)
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=0.5A, RG=25m,
VGS=10V, RD=3.125
VGS=10V, VDS=50V, ID=1.3A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note) VSD IS =25A, VGS =0V
Reverse Recovery Time
Reverse Recovery Charge
tRR IS =25A,VGS =0V,
QRR dI/dt=100A/µs
Note: Pulse Test : Pulse width 300μs, Duty cycle 2%.
MIN TYP MAX UNIT
200 V
0.14 V/°C
1
100
±100
µA
µA
nA
2 4V
112 160 m
14 S
1000 1700
240
25
pF
pF
pF
56 ns
75 ns
240 ns
100 ns
35 40 nC
8 nC
9.7 nC
1.3
90
380
V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-A84.D


Part Number 25N20
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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25N20 Datasheet PDF





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