* RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET www.

in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES * RDS(ON) .

The UTC 2N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used .

2N60K-TA

2N60

2N60-C

2N60-CBS

2N60-E

2N60-F

2N60-TC

2N6008

2N6009

2N6027

2N6028

2N6029

2N6030