2N90 Key Features
- RDS(ON) ≤ 7.2 Ω @ VGS=10V, ID=1.1A
- High switching speed
- Improved dv/dt capability
- 100% avalanche tested
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 2N90
- Manufacturer: Unisonic Technologies (official site)
- Size: 275.04 KB
Other 2N90 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2N90 | N-Channel MOSFET Transistor |
Unisonic Technologies |
2N90-FC | N-CHANNEL MOSFET |
New Jersey Semi-Conductor |
2N909 | SI NPN LO-PWR BJT |
2N90 Description
The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode.