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2N90 - N-CHANNEL POWER MOSFET

General Description

The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology.

This technology specialized in allowing a minimum on-state resistance and superior switching performance.

Key Features

  • RDS(ON) ≤ 7.2 Ω @ VGS=10V, ID=1.1A.
  • High switching speed.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 2N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N90. For precise diagrams, tables, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 2N90 2.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to prov...

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an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N90 is universally applied in high efficiency switch mode power supply.  FEATURES * RDS(ON) ≤ 7.2 Ω @ VGS=10V, ID=1.