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Unisonic Technologies

2SA1020 Datasheet Preview

2SA1020 Datasheet

PNP EPITAXIAL SILICON TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
2SA1020
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power
switching applications.
FEATURES
*Low collector saturation voltage:
VCE(SAT)=-0.5V(MAX) (IC= -1A)
*High speed switching time: tSTG=1.0μs(TYP)
*Complement to UTC 2SC2655
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SA1020L-x-AE3-R
2SA1020G-x-AE3-R
SOT-23
2SA1020L-x-AB3-R
2SA1020G-x-AB3-R
SOT-89
2SA1020L-x-T92-B
2SA1020G-x-T92-B
TO-92
2SA1020L-x-T92-K
2SA1020G-x-T92-K
TO-92
2SA1020L-x-T9N-B
2SA1020G-x-T9N-B
TO-92NL
2SA1020L-x-T9N-K
2SA1020G-x-T9N-K
TO-92NL
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
EBC
BCE
EBC
EBC
ECB
ECB
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
MARKING
SOT-89
TO-92
SOT-23
A10
1
L: Lead Free
G: Halogen Free
TO-92NL
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 4
QW-R211-007.H




Unisonic Technologies

2SA1020 Datasheet Preview

2SA1020 Datasheet

PNP EPITAXIAL SILICON TRANSISTOR

No Preview Available !

2SA1020
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-50
-5
V
V
Collector Current
Ic -2 A
SOT-23
300 mW
Collector Power Dissipation
SOT-89
TO-92
TO-92NL
PC
500 mW
900 mW
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector to Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
SYMBOL
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
COB
tON
TEST CONDITIONS
IC=-10mA, IB=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
IC=-1A, IB=-0.05A
IC=-1A, IB=-0.05A
VCE=-2V, Ic=-0.5A
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-50 V
-1.0 μA
-1.0 μA
70 240
40
-0.5 V
-1.2 V
100 MHz
40 pF
0.1 μs
Switching Time Storage Time
tSTG
1.0 μs
Fall Time
tF
0.1 μs
CLASSIFICATION OF hFE1
RANK
RANGE
O
70 - 140
Y
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-007.H


Part Number 2SA1020
Description PNP EPITAXIAL SILICON TRANSISTOR
Maker Unisonic Technologies
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2SA1020 Datasheet PDF






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