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Unisonic Technologies

3003BS Datasheet Preview

3003BS Datasheet

NPN SILICON TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
13003BS
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR
TRANSISTORS FOR LOW
FREQUENCY AMPLIFICATION
DESCRIPTION
The UTC 13003BS is a silicon NPN power switching transistor; it
uses UTC’s advanced technology to provide customers high
collector-base breakdown voltage, low reverse leakage current and
high reliability, etc.
The UTC 13003BS is suitable for electronic ballast power switch
circuit and the compact electronic energy-saving light.
FEATURES
* High collector-base breakdown voltage
* Low reverse leakage current
* High reliability
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13003BSL-TM3-T
13003BSG-TM3-T
13003BSL-T60-K
13003BSG-T60-K
13003BSL-T92-B
13003BSG-T92-B
13003BSL-T92-K
13003BSG-T92-K
13003BSL-T92-R
13003BSG-T92-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-251
TO-126
TO-92
TO-92
TO-92
Pin Assignment
123
BCE
BCE
BCE
BCE
BCE
Packing
Tube
Bulk
Tape Box
Bulk
Tape Reel
13003BSL-TM3-T
(1)Packing Type
(1) T: Tube, B: Bluk, K: Bulk, R: Tape Reel
(2)Package Type
(2) TM3: TO-251, T60: TO-126, T92: TO-92
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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Unisonic Technologies

3003BS Datasheet Preview

3003BS Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

13003BS
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
800
450
V
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
Continuous
Peak
IC
ICM
2
4
A
A
Base Current
Continuous
Peak
IB
IBM
1
2
A
A
TO-251
10 W
Power Dissipation (TC=25°C)
TO-126
TO-92
PD
20 W
1W
Junction Temperature
Storage Temperature Range
TJ
TSTG
150
-55~+150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-251
TO-126
TO-92
TO-251
TO-126
TO-92
SYMBOL
θJA
θJC
RATING
90
100
150
12.5
7.5
100
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note)
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
Low current and high current hFE2 hFE1 ratio hFE1/ hFE2
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
Storage Time
tS
Rise Time
tR
Fall Time
tF
Transition Frequency
fT
Note: Pulse test, pulse width tp300µs, Duty cycle2%.
TEST CONDITIONS
IC=1mA, IE=0
IC=1mA, IB=0
IE=1mA, IC=0
VCB=800V, IE=0
VCE=450V, IB=0
VEB=9V, IC=0
VCE=5V, IC=0.2mA
hFE1: VCE=5V, IC=5mA
hFE2: VCE=5V, IC=0.2A
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
UI9600, IC=0.25A
VCE=10V, IC=0.1A, f=1MHz
MIN TYP MAX UNIT
800 V
450 V
9V
0.1 mA
0.1 mA
0.1 mA
20 35
0.75
0.8 V
1.5 V
2 5 μs
2 μs
2 μs
5 MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R223-018. a


Part Number 3003BS
Description NPN SILICON TRANSISTOR
Maker Unisonic Technologies
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