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30N06-Q - N-CHANNEL POWER MOSFET

General Description

The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics.

Key Features

  • S.
  • RDS(ON) = 40mΩ@VGS = 10 V, ID=15A.
  • Ultra low gate charge ( typical 20nC ).
  • Low reverse transfer Capacitance ( CRSS = typical 80 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability.
  • SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO- 252.

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Full PDF Text Transcription for 30N06-Q (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 30N06-Q. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 30N06-Q Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have be...

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e UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.