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Unisonic Technologies

30N20 Datasheet Preview

30N20 Datasheet

200V N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
30N20
30A, 200V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 30N20 is an N-channel mode Power FET, it uses
UTC’s advanced technology. This technology allows a minimum
on-state resistance, superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
FEATURES
* RDS(ON) < 75m@ VGS=10V, ID=15A
* Low Gate Charge (Typical 60nC)
* High Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
30N20L-TA3-T
30N20G-TF2-T
30N20L-TF2-T
30N20G-TF2-T
30N20L-T47-T
30N20G-T47-T
30N20L-TQ2-T
30N20G-TQ2-T
30N20L-TQ2-R
30N20G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F2
TO-247
TO-263
TO-263
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-823.E




Unisonic Technologies

30N20 Datasheet Preview

30N20 Datasheet

200V N-CHANNEL POWER MOSFET

No Preview Available !

30N20
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
Pulsed
ID
IDM
30
90
A
A
Avalanche Energy
Single Pulsed
EAS
640 mJ
TO-220/TO-263
140 W
Power Dissipation
TO-220F2
PD
40 W
TO-247
214 W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
TO-220/TO-220F2
Junction to Ambient
TO-263
TO-247
TO-220/TO-263
Junction to Case
TO-220F2
TO-247
SYMBOL
θJA
θJC
RATINGS
62.5
40
0.89
3.125
0.58
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=200V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
ID=250µA
VGS=10V, ID=15A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDD=50V, VGS=10V , ID=1.3A
VDD=30V, ID=0.5A, RG=25,
VGS=0~10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=30A, VGS=0V
MIN TYP MAX UNIT
200 V
1 μA
+100 nA
-100 nA
1.5 3.5 V
75 m
2400 3100 pF
430 560 pF
55 70 pF
60 78 nC
17 nC
27 nC
40 ns
280 ns
125 ns
115 ns
30 A
90 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-823.E


Part Number 30N20
Description 200V N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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