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Unisonic Technologies

3N70K-MK Datasheet Preview

3N70K-MK Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
3N70K-MK
Preliminary
3A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N70K-MK is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) <4.2@VGS = 10 V
* Low reverse transfer capacitance
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N70KL-TF1-T
3N70KG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-012.a




Unisonic Technologies

3N70K-MK Datasheet Preview

3N70K-MK Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

3N70K-MK
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
700
±30
V
V
Avalanche Current (Note 2)
Continuous Drain Current
IAR 3.0 A
ID 3.0 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Power Dissipation
Derate above 25°C
IDM
EAS
EAR
PD
12 A
60 mJ
7.5 mJ
34 W
0.27 W/°C
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 13.33mH, IAS = 3A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 3.0A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.7
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R205-012.a


Part Number 3N70K-MK
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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