4NM50 Key Features
- RDS(ON) ≤ 1.3Ω @ VGS=10V, ID=2.0A
- Fast Switching Capability
- Avalanche Energy Tested
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 4NM50
- Manufacturer: Unisonic Technologies (official site)
- Size: 712.75 KB
Related Unisonic Technologies Datasheets
| Part Number | Description |
|---|---|
| 4NM65 | N-CHANNEL POWER MOSFET |
| 4NM65-U2 | N-CHANNEL POWER MOSFET |
4NM50 Description
The UTC 4NM50 is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 4NM50 Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics.