6N65-P mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 2.0Ω @ VGS = 10V, ID = 3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
of switching power supplies and adaptors.
* FEATURES
* RDS(ON) < 2.0Ω @ VGS = 10V, ID = 3.1A * Fast switching capabi.
The UTC 6N65-P is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed sw.
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