6NM65-Q Key Features
- RDS(on) < 1.08 Ω @ VGS=10V, ID=3A
- Improved dv/dt capability
- Fast switching
- 100% avalanche tested
- SYMBOL
- ORDERING INFORMATION
- Part: 6NM65-Q
- Manufacturer: Unisonic Technologies (official site)
- Size: 225.35 KB
Related Unisonic Technologies Datasheets
| Part Number | Description |
|---|---|
| 6NM65-S | N-CHANNEL POWER MOSFET |
| 6NM60-Q | N-CHANNEL POWER MOSFET |
| 6NM60-S | N-CHANNEL POWER MOSFET |
| 6NM70-S | N-CHANNEL POWER MOSFET |
| 6NM90 | N-CHANNEL POWER MOSFET |
6NM65-Q Description
The UTC 6NM65-Q is a Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 6NM65-Q is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.