7N60-R - N-CHANNEL POWER MOSFET

Description

The UTC 7N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) = 1.2 @ VGS = 10V, ID = 3.7A.
Fast Switching Capability.
Avalanche Energy Tested.
Improved dv/dt Capability, High Ruggedness.
SYMBOL Power MOSFET.

Unisonic Technologies

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Datasheet Details

Part number	7N60-R
Manufacturer	Unisonic Technologies
File Size	348.90 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	7N60-R Datasheet
Additional preview pages of the 7N60-R datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 7N60-R 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.2 @ VGS = 10V, ID = 3.

Published: Jan 29, 2016 |