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7N65-M - N-CHANNEL POWER MOSFET

General Description

The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 1.2 Ω @ VGS = 10V, ID = 3.7A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 7N65-M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 7N65-M. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 7N65-M 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better charact...

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is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 1.2 Ω @ VGS = 10V, ID = 3.