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Unisonic Technologies

8N60-E Datasheet Preview

8N60-E Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
8N60-E
Preliminary
8A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N60-E is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) < 1.4@VGS = 10 V
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
8N60L-TF1-T
8N60G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A86.b




Unisonic Technologies

8N60-E Datasheet Preview

8N60-E Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

8N60-E
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 600 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
8A
8A
32 A
160 mJ
14.7 mJ
4.5 V/ns
Power Dissipation
Junction Temperature
PD 48 W
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 5mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 7.5A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
2.6
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-A86.b


Part Number 8N60-E
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
PDF Download

8N60-E Datasheet PDF






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