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9N80 - N-CHANNEL MOSFET

General Description

The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology.

This technology is specialized in allowing a minimum on-state resistance and superior switching performance.

Key Features

  • RDS(on) = 1.3Ω @VGS = 10 V.
  • Improved Gate Charge.
  • Lower Input Capacitance.
  • Lower Leakage Current: 25μA (Max. ) @ VDS = 800V.
  • SYMBOL 1 1 Power MOSFET TO-220 TO-220F1 TO-220F2.

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Full PDF Text Transcription for 9N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 9N80. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 9N80 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to prov...

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an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 9N80 is universally applied in high efficiency switch mode power supply. „ FEATURES * RDS(on) = 1.3Ω @VGS = 10 V * Improved Gate Charge * Lower Input Capacitance * Lower Leakage Current: 25μA (Max.

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