9N80 Key Features
- RDS(on) = 1.3Ω @VGS = 10 V
- Improved Gate Charge
- Lower Input Capacitance
- Lower Leakage Current: 25μA (Max.) @ VDS = 800V
- SYMBOL
- ORDERING INFORMATION
- Part: 9N80
- Description: N-CHANNEL MOSFET
- Manufacturer: Unisonic Technologies
- Size: 224.04 KB
Other 9N80 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
9N80 | N-Channel MOSFET Transistor |
Inchange Semiconductor |
9N80A | N-Channel MOSFET |