Datasheet4U Logo Datasheet4U.com

9NM65 - N-CHANNEL POWER MOSFET

Description

The UTC 9NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at AC-DC converters for power applications.

FE

Features

  • S.
  • RDS(ON) ≤ 0.58Ω @ VGS=10V, ID=4.5A.
  • High switching Speed.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

Datasheet preview – 9NM65

📁 Similar Datasheet

  • 9NM65-FD - N-CHANNEL MOSFET (UTC)
  • 9NM65-FDS - N-CHANNEL MOSFET (UTC)
  • 9NM60-FDS - N-CHANNEL MOSFET (UTC)
  • 9NM60N - STD9NM60N (STMicroelectronics)
  • 9NM70 - N-CHANNEL POWER MOSFET (UTC)
  • 9NM70-FDS - N-CHANNEL MOSFET (UTC)
  • 9NM70-S - N-CHANNEL POWER MOSFET (UTC)
  • 9NM95-Q - 950V N-CHANNEL MOSFET (UTC)
  • 9NM95Z - 950V N-CHANNEL SUPER-JUNCTION MOSFET (UTC)
Other Datasheets by Unisonic Technologies
  • 9NM60 - N-CHANNEL POWER MOSFET
  • 9NM60-S - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 9NM65 9A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 9NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.  FEATURES * RDS(ON) ≤ 0.58Ω @ VGS=10V, ID=4.5A * High switching Speed * 100% avalanche tested * Improved dv/dt capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
Published: |