NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25 )
VCBO 120 V
VCEO 120 V
VEBO 5 V
Collector Power Dissipation
PC 1 W
IC 2 A
ICP 3 A
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 )
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=50µA
Collector-Emitter Breakdown Voltage BVCEO IC=1mA
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Transfer Ratio
hFE VCE=5V, IC=0.1A
Collector-Emitter Saturation Voltage VCE(SAT) IC=/IB=1A/0.1A(Note)
fT VCE=5V, IE= -0.1A, f=30MHz.
Cob VCB=10V, IE=0A, f=1MHz(Note)
Note Measured using pulse current.
CLASSIFICATION OF hFE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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