D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector-Base voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector dissipation(Ta=25C)
Collector current
Junction Temperature
Storage Temperature
D965SS
D965ASS
SYMBOL
VCBO
VCEO
VEBO
Pc
IC
TJ
TSTG
RATINGS
40
20
30
7
750
5
150
-65 ~ +150
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown D965SS
voltage
D965ASS
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Current gain bandwidth product
Output capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC=100μA, IE=0
BVCEO IC=1mA, IB=0
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT)
fT
Cob
IC =0, IE=10μA
VCB=10V, IE=0
VEB=7V, IC=0
VCE=2V, IC=1mA
VCE=2V, IC=0.5A
VCE=2V, IC=2A
Ic=3A, IB= 0.1A
VCE=6V,IC=50mA
VCB=20V,IE=0, f=1MHz
CLASSIFICATION OF hFE2
RANK
RANGE
Q
230~380
R
340~600
UNIT
V
V
V
mW
A
C
C
MIN TYP MAX UNIT
40 V
20 V
30 V
7V
100 nA
100 nA
200
230 800
150
1V
150 MHz
50 pF
S
560~800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-016.D
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