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Unisonic Technologies

F5N50 Datasheet Preview

F5N50 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
F5N50
5A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC F5N50 is an N-channel power MOSFET adopting
UTC’s advanced technology to provide customers with DMOS,
planar stripe technology. This technology is designed to meet the
requirements of the minimum on-state resistance and perfect
switching performance. It also can withstand high energy pulse in
the avalanche and communication mode.
The UTC F5N50 can be used in applications, such as active
power factor correction, high efficiency switched mode power
supplies, electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 1.6@ VGS=10V, ID=2.5A
* 100% avalanche tested
* High switching speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
F5N50L-TF3-T
F5N50G-TF3-T
F5N50L-TN3-R
F5N50G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A90.B




Unisonic Technologies

F5N50 Datasheet Preview

F5N50 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

F5N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
500
±30
V
V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
5
20
A
A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
EAS
EAR
dv/dt
5A
200 mJ
7.3 mJ
4.5 V/ns
Power Dissipation
TO-220F
TO-252
PD
38 W
54 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 16mH, IAS = 5A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F
TO-252
Junction to Case
TO-220F
TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
3.25
2.13
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-A90.B


Part Number F5N50
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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