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MCR101-8 Datasheet Preview

MCR101-8 Datasheet

SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS

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UNISONIC TECHNOLOGIES CO., LTD
MCR101
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
SCR
DESCRIPTION
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls,
gate drivers for larger thrusters, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily
adaptable for use in automatic insertion equipment.
FEATURES
*Sensitive Gate Allows Triggering by Micro Controllers and other
Logic Circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
*Immunity to dV/dt – 20V/sec Minimum at 110C
*Glass-Passivated Surface for Reliability and Uniformity
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MCR101L-x-xx-T92-B
MCR101G-x-xx-T92-B
MCR101L-x-xx-T92-K
MCR101G-x-xx-T92-K
Note: Pin Assignment: G: Gate A: Anode K: Cathode
Package
TO-92
TO-92
Pin Assignment
123
GAK
GAK
Packing
Tape Box
Bulk
MARKING
MCR101-4
MCR101-6
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
MCR101-8
1 of 5
QW-R301-009.E




Unisonic Technologies

MCR101-8 Datasheet Preview

MCR101-8 Datasheet

SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS

No Preview Available !

MCR101
SCR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Peak Repetitive Off-State Voltage(note)
MCR101-4
200
(TJ=-40 to 110C, Sine Wave, 50 to 60Hz; Gate MCR101-6 VDRM,VRRM
Open)
MCR101-8
400
600
V
On-Sate RMS Current (TC=80C) 180Condition Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, TJ=25C)
Circuit Fusing Considerations (t=8.3 ms)
ITSM
10
A
I2t
0.415
A2s
Forward Peak Gate Power (TA=25C, Pulse Width 1.0μs)
Forward Average Gate Power (TA=25C, t=8.3ms)
PGM
PG(AV)
0.1
0.1
W
W
Peak Gate Current – Forward (TA=25C, Pulse Width1.0μs)
Peak Gate Voltage – Reverse (TA=25C, Pulse Width1.0μs)
IGM
VGRM
1
5
A
V
Operating Junction Temperature @ Rated VRRM and VDRM
Storage Temperature
TJ
TSTG
-40 ~ +110
-40 ~ +150
C
C
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
200
75
ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise stated)
UNIT
C/W
C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Peak Forward or Reverse
Blocking Current
TC=25C
TC=125C
IDRM, IRRM VD=Rated VDRM and VRRM; RGK=1k
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note1)
Gate Trigger Current (Continuous dc)
Holding Current
TC=25 C
TC=-40 C
Latch Current
TC=25C
TC=-40 C
Gate Trigger Current
(continuous dc)
TC=25 C
TC=-40 C
VTM ITM=1A Peak @ TA=25C
IGT VAK=7Vdc, RL=100, TC=25C
IH VAK=7Vdc, initiating current=20mA
IL VAK=7V, Ig=200A
VGT VAK=7Vdc, RL=100
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
dV/dt
VD=Rated VDRM, Exponential
Waveform, RGK=1000, TJ=110C
Critical Rate of Rise of On-State Current
di/dt
IPK=20A, Pw=10μsec
diG/dt=1A/μsec, Igt=20mA
Note: Indicates Pulse Test Width1.0ms, duty cycle 1%
MIN TYP MAX UNIT
10
100
μA
1.7
40 200
0.5 5
10
0.6 10
15
0.62 0.8
1.2
V
μA
mA
mA
V
20 35
V/μs
50 A/μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R301-009.E


Part Number MCR101-8
Description SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
Maker Unisonic Technologies
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