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MN2510 - NPN SILICON TRANSISTOR

General Description

The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

The UTC MN2510 is suitable for automobile power amplifiers, etc.

Key Features

  • High DC current gain (MIN = 40 @VCE = 4V, IC = 12A).
  • High collector-emitter breakdown voltage (MIN = 100V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MN2510 is suitable for automobile power amplifiers, etc.  FEATURES * High DC current gain (MIN = 40 @VCE = 4V, IC = 12A) * High collector-emitter breakdown voltage (MIN = 100V)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MN2510L-x-T3P-T MN2510G-x-T3P-T Pin Assignment: B: Base C: Collector E: Emitter Package TO-3P Pin Assignment 123 BCE Packing Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-020.