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Unisonic Technologies

MN2510 Datasheet Preview

MN2510 Datasheet

NPN SILICON TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
MN2510
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
NPN TRANSISTOR
DESCRIPTION
The UTC MN2510 is an NPN transistor, it uses UTC’s advanced
technology to provide the customers with high DC current gain and
high collector-emitter breakdown voltage, etc.
The UTC MN2510 is suitable for automobile power amplifiers,
etc.
FEATURES
* High DC current gain (MIN = 40 @VCE = 4V, IC = 12A)
* High collector-emitter breakdown voltage (MIN = 100V)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MN2510L-x-T3P-T
MN2510G-x-T3P-T
Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-3P
Pin Assignment
123
BCE
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R214-020.a




Unisonic Technologies

MN2510 Datasheet Preview

MN2510 Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

MN2510
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100 V
Collector-Emitter Voltage
VCEO
100 V
Emitter-Base Voltage
VEBO
6V
Collector Current
IC 25 A
Base Current
Collector Power Dissipation (TC=25°C)
IB
Pc
5A
125 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Voltage
DC Current Gain (Note 1)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Cut-Off Frequency
Output Capacitance
CLASSIFICATION OF hFE
SYMBOL
TEST CONDITIONS
ICBO VCB=100V
IEBO VEB=6V
V(BR)CEO IC=50mA
hFE VCE=4V, IC=12A
VCE(sat) IC=12A, IB=1.2A
VBE(ON) VCE=4V, IC=12A
fT VCE=12V, IE=-1A
Cob VCB=10V, IE=0A, f=1MHz
MIN TYP MAX UNIT
10 µA
10 µA
100 V
40 120
1.5 V
1.8 V
20 MHz
200 pF
RANK
hFE1
R
40~80
O
60~120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R214-020.a


Part Number MN2510
Description NPN SILICON TRANSISTOR
Maker Unisonic Technologies
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