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UDN302 - Power MOSFET

Description

The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON)=55mΩ @ VGS=-4.5V.
  • RDS(ON)=80mΩ @ VGS=-2.5V.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source.

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Other Datasheets by Unisonic Technologies

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UDN302 P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET „ DESCRIPTION The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UDN302L-AE3-R UDN302G-AE3-R Package SOT-23 Pin Assignment 123 SGD Packing Tape Reel „ MARKING NC03 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-278.
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