Download UDN302 Datasheet PDF
Unisonic Technologies
UDN302
UDN302 is Power MOSFET manufactured by Unisonic Technologies.
DESCRIPTION The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. - FEATURES - RDS(ON)=55mΩ @ VGS=-4.5V - RDS(ON)=80mΩ @ VGS=-2.5V - Low capacitance - Low gate charge - Fast switching capability - Avalanche energy specified - SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source - ORDERING INFORMATION Ordering Number Lead Free Halogen Free UDN302L-AE3-R UDN302G-AE3-R Package SOT-23 Pin Assignment 123 SGD Packing Tape Reel - MARKING NC03 L: Lead Free G: Halogen Free .unisonic..tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-278.B Power MOSFET - ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS ±12 V Continuous Drain Current Pulsed Drain Current ID -2.4 A IDM -10 A Maximum Power...