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UP9T15G Datasheet N-CHANNEL POWER MOSFET

Manufacturer: Unisonic Technologies

General Description

The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Overview

UNISONIC TECHNOLOGIES CO., LTD UP9T15G N-CHANNEL ENHANCEMENT MODE POWER.

Key Features

  • S.
  • VDS(V)=20V.
  • ID=12 .5A (VGS=4.5V).
  • RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A.
  • RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.