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UT2N10 page 2
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UT2N10 page 3
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UT2N10 Key Features

  • RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A
  • Design Optimized for 5V Gate Drives
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

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UT2N10 Description

The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages. The UTC UT2N10 is universally applied in logic level (5V) driving sources, such as automotive switching, solenoid drivers and programmable controllers.