UT2N10 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: Unisonic Technologies

UT2N10 n-channel power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	UT2N10
Manufacturer	Unisonic Technologies
File Size	697.31 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	UT2N10 Datasheet

General Description

The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages.

The UTC UT2N10 is universally applied in logic level (5V) driving sources, such as automotive switching, solenoid drivers and programmable controllers.

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Overview

UNISONIC TECHNOLOGIES CO., LTD UT2N10 2.0A, 100V N-CHANNEL POWER.

Key Features

S.
RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A.
Design Optimized for 5V Gate Drives.
Can be Driven Directly from QMOS, NMOS, TTL Circuits.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.

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